ds15005 rev. e-2 1 of 2 rs3a/b - rs3m/b www.diodes.com diodes incorporated rs3a/b - rs3m/b 3.0a surface mount fast recovery rectifier features ab, bb, db, gb, jb, kb, mb suffix designates smb package a, b, d, g, j, k, m suffix designates smc package smb smc dim min max min max a 3.30 3.94 5.59 6.22 b 4.06 4.57 6.60 7.11 c 1.96 2.21 2.75 3.18 d 0.15 0.31 0.15 0.31 e 5.00 5.59 7.75 8.13 g 0.10 0.20 0.10 0.20 h 0.76 1.52 0.76 1.52 j 2.00 2.62 2.00 2.62 all dimensions in mm a b c d g h e j maximum ratings and electrical characteristics @ t a = 25 c unless otherwise specified glass passivated die construction fast recovery time for high efficiency low forward voltage drop and high current capability surge overload rating to 100a peak ideally suited for automatic assembly plastic material: ul flammability classification rating 94v-0 mechanical data case: molded plastic terminals: solder plated terminal - solderable per mil-std-202, method 208 polarity: cathode band or cathode notch marking: type number smb weight: 0.09 grams (approx.) smc weight: 0.20 grams (approx.) single phase, half wave, 60hz, resistive or inductive load. for capacitive load, derate current by 20%. characteristic symbol rs3 a/ab rs3 b/bb rs3 d/db rs3 g/gb rs3 j/jb rs3 k/kb rs3 m/mb unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 50 100 200 400 600 800 1000 v rms reverse voltage v r(rms) 35 70 140 280 420 560 700 v average rectified output current @ t t = 75 c i o 3.0 a non-repetitive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fsm 100 a forward voltage @ i f = 3.0a v fm 1.3 v peak reverse current @ t a = 25 c at rated dc blocking voltage @ ta = 125 c i rm 5.0 250 a maximum recovery time (note 3) t rr 150 250 500 ns typical junction capacitance (note 2) c j 50 pf typical thermal resistance junction to terminal (note 1) r jt 25 k/w operating and storage temperature range t j, t stg -65 to +150 c notes: 1. thermal resistance: junction to terminal, unit mounted on pc board with 5.0 mm 2 (0.013 mm thick) copper pad as heat sink. 2. measured at 1.0mhz and applied reverse voltage of 4.0v dc. 3. reverse recovery test conditions: i f = 0.5a, i r = 1.0a, i rr = 0.25a. see figure 5.
ds15005 rev. e-2 2 of 2 rs3a/b - rs3m/b www.diodes.com 0 0.5 1.0 25 50 75 100 125 150 175 i , average forward current (a) (av) t , terminal temperature (c) t fi g . 1 forward current deratin g curve 1.5 2.0 2.5 3.0 0.01 0.1 1.0 10 0 0.4 0.8 1.2 1.6 t = 25c j i instantaneous forward current (a) f, v , instantaneous forward voltage (v) f fi g . 2 t y pical forward characteristics 0 20 1 10 100 i , peak forward surge current (a ) fsm number of cycles at 60 hz fi g . 3 forward sur g e current deratin g curve single half-sine-wave (jedec method) 40 60 80 100 50v dc approx oscilloscope (note 1) pulse generator (note 2) device under te s t t rr set time base for 50/100 ns/cm +0.5a 0a -0.25a -1.0a fi g . 5 reverse recover y time characteristic and test circuit (+) (+) (-) (-) 0.1 1.0 10 100 1000 0 20 40 60 80 100 120 140 percent of rated peak reverse voltage (%) fi g .4 t y pical reverse characteristics t = 125c j t=25c j
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